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| PIN Photodiodes PNZ331CL PIN Photodiode o5.40.1 o4.20.05 1. 0 0. 1 Unit : mm 1 0. 0 1. For optical fiber communication systems Features TO-18 standard type package High coupling capability suitable for plastic fiber High quantum efficiency High-speed response 3.250.3 14.20.5 2.250.1 (0.2) 3-o0.450.04 45 o2.540.25 3 2 3 1 Absolute Maximum Ratings (Ta = 25C) Parameter Reverse voltage (DC) Power dissipation Operating ambient temperature Storage temperature Symbol VR PD Topr Tstg Ratings 30 50 -25 to +85 -30 to +100 Unit V mW C C Active region 1: Anode 2: Case 3: Cathode Dimensions of detection area 1.1 0.88 A1 o0.1 Unit : mm Electro-Optical Characteristics (Ta = 25C) Parameter Dark current Photo current Peak sensitivity wavelength Response time Capacitance between pins Photodetection sensitivity Acceptance half angle Photodetection surface shape Symbol ID IL P tr, tf*2 Ct R D VR = 10V VR = 10V, L = 1000 lx*1 VR = 10V VR = 10V, RL = 50 VR = 10V VR = 10V, = 800nm Measured from the optical axis to the half power point Effective detection area 7 Conditions min typ 0.1 14 900 2 3 0.55 70 0.88 max 10 Unit nA A nm ns pF A/W deg. mm Note 1) Spectral sensitivity: Sensitivity at wavelengths exceeding 400 nm as a percentage of maximum sensitivity is 100% Note 2) This product is not designed to withstand electromagnetic radiation or heavy-charge particles. Note 3) Difficult to guarantee compliance with moisture resistance standard (MIL-STD-202D) *1 *2 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit (see figure below) Sig.IN VR = 10V (Input pulse) Sig.OUT (Output pulse) RL td tr tf 90% 10% td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) P = 800nm 50 ,,, , ,,, , 1 PIN Photodiodes PNZ331CL PD -- Ta 60 10 2 VR = 10V Ta = 25C T = 2856K IL -- L 10 2 VR = 10V Ta = 25C = 800nm IL -- P 50 PD (mW) IL (A) 40 Power dissipation Photo current 30 1 Photo current 10 2 10 3 10 4 IL (A) 10 10 1 20 10 -1 10 -1 10 0 - 25 0 20 40 60 80 100 10 -2 10 10 -2 10 10 2 10 3 10 4 Ambient temperature Ta (C ) Illuminance L (lx) Incident photo power P (W) ID -- VR 1 Ta = 25C 10 2 10 3 VR = 10V ID -- Ta 160 VR = 10V = 800nm R -- Ta R (%) Photodetection sensitivity 0 20 40 60 80 100 ID (nA) ID (nA) 120 10 Dark current 10 -1 Dark current 1 80 10 -1 40 10 -2 10 -2 0 8 16 24 32 10 -3 - 40 - 20 0 - 40 - 20 0 20 40 60 80 100 Reverse voltage VR (V) Ambient temperature Ta (C ) Ambient temperature Ta (C ) IL -- Ta 160 Spectral sensitivity characteristics R (%) VR = 10V L = 1000 lx T = 2856K 100 VR = 10V Ta = 25C 6 4 80 Frequency characteristics Relative photodetection sensitivity 120 P (dB) Relative power output IL (%) 2 0 -2 -4 -6 -8 Relative photo current 60 80 40 40 20 0 - 40 - 20 0 20 40 60 80 100 0 200 400 600 800 1000 1200 - 10 1 10 10 2 10 3 Ambient temperature Ta (C ) Wavelength (nm) Frequency f (MHz) 2 PNZ331CL Coupling loss characteristics PIN Photodiodes Coupling loss characteristics Ct -- V R 10 2 f = 1MHz Ta = 25C 0 LX , LY -- X, Y 0 Z = 0mm 1 1 LZ -- Z X,Y = 0mm Capacitance between pins Ct (pF) 10 Coupling loss LX , LY (dB) 2 Coupling loss LZ (dB) Z = 0.3mm 2 1 3 Y 4 X Fiber Z o1mm 3 Y 4 X 5 Fiber Z o1mm 10 -1 10 -2 10 -1 1 10 10 2 5 - 0.8 - 0.4 0 0.4 0.8 0 0.4 0.8 1.2 1.6 Reverse voltage VR (V) Distance X, Y (mm) Distance Z (mm) 3 |
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